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IRF9204PbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-40
–––
–––
V
V GS = 0V, I D = -250 μ A
Δ V (BR)DSS / Δ T J Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C Reference to 25°C, I D = -1mA
R DS(on)
V GS(th)
gfs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
-1.0
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
149
27
31
27
383
139
153
16
23
-3.0
–––
-25
-250
-100
100
224
–––
–––
–––
–––
–––
–––
m Ω
V
S
μ A
nA
nC
ns
V GS = -10V, I D = -37A
V GS = -4.5V, I D = -30A
V DS = V GS , I D = -100 μ A
V DS = -10V, I D = -37A
V DS = -40V, V GS = 0V
V DS = -40V, V GS = 0V, T J = 125°C
V GS = -20V
V GS = 20V
I D = -37A
V DS = -32V
V GS = -10V
V DD = -20V
I D = -37A
R G = 7.5 Ω
V GS = -10V
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
Input Capacitance
Output Capacitance
–––
–––
7676
654
–––
–––
V GS = 0V
V DS = -25V
C rss
C oss
C oss
C oss eff.
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
539
1747
598
797
–––
–––
–––
–––
pF
? = 1.0KHz
V GS = 0V, V DS = 1.0V, ? = 1.0KHz
V GS = 0V, V DS = -32V, ? = 1.0KHz
V GS = 0V, V DS = 0V to -32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
(Body Diode)
–––
–––
-74
A
MOSFET symbol
showing the
D
I SM
Pulsed Source Current
(Body Diode)
–––
–––
-300
integral reverse
p-n junction diode.
G
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.3 V
––– 51 77 ns
––– 377 566 nC
T J = 25°C, I S = -37A, V GS = 0V
T J = 25°C, I F = -37A, V DD = -20V
di/dt = 100A/ μ s
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
? Limited by T Jmax , starting T J = 25°C, L = 0.399mH
R G = 25 Ω , I AS = -37A, V GS =-10V. Part not recommended for
use above this value.
? Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
? C oss eff. is a fixed capacitance that gives the same charging
time as C oss while V DS is rising from 0 to 80% V DSS .
2
? Limited by T Jmax , see Fig.17a, 17b, 14, 15 for typical repetitive
avalanche performance.
? This value determined from sample failure population. 100%
tested to this value in production.
? This is only applied to TO-220AB pakcage.
? R θ is measured at T J approximately 90°C
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